Common characteristic:
1.DRAM+interposer are already bonded (hybrid bond) before TSV
2.TSVs Cu embedded before incoming
Via last flow
i)BSG:BG-->Backside CVD-->PR litho
ii)TSV formation: TSV etch-->Linear deposition-->Etch-->TSV TiCu deposition
iii)RDL-->PI-->UBM-->C4 bump-->Dicing
1.TSV is etched after wafer thinning(435+12.5+50)
2. TSV depth is shorter(interposer 50um)
Via middle flow:
i)Early thinning & oxide: Wafer trim-->BG-->CVD oxide-->BG/Si CMP
ii)TSV reveal+TSV dielectric:TSV reveal etch-->TSV CVD-->Oxide CMP
iii) Bump : PVD TiCu-->PI PSV-->ECD Cu/SnAg-->reflow
iv)Final front side Grind-->Dicing
*TSV &bump is processed on thicker wafer (775+12.5+108um)